Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, SF | en_US |
dc.contributor.author | Chang, WJ | en_US |
dc.contributor.author | Liu, SJ | en_US |
dc.contributor.author | Juang, JY | en_US |
dc.contributor.author | Lin, JY | en_US |
dc.contributor.author | Wu, KH | en_US |
dc.contributor.author | Uen, TM | en_US |
dc.contributor.author | Gou, YS | en_US |
dc.date.accessioned | 2014-12-08T15:40:32Z | - |
dc.date.available | 2014-12-08T15:40:32Z | - |
dc.date.issued | 2003-08-01 | en_US |
dc.identifier.issn | 0921-4526 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/S0921-4526(03)00261-8 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/27663 | - |
dc.description.abstract | The biepitaxial La0.7Ca0.3MnO3 (LCMO) thin films grown on SrTiO3 substrates using a buffer layer of anatase TiO2 were fabricated. The magnetoresistance (MR) of biepitaxial step junction (BSJ) across the boundary layer of biepitaxial LCMO (0 0 1) and LCMO (I 10) film was investigated. The temperature and field dependence of MR for BSJ are qualitatively similar to those obtained in other type of artificial grain boundaries with a comparable MR ratio at low temperatures. However, the observed linear current-voltage characteristic across BSJ is in sharp contrary to the commonly reported non-ohmic characteristics. The results are consistent with features predicted by the model of spin-dependent transport across a depressed magnetic ordering and metallic-like junction layer. (C) 2003 Elsevier Science B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | magnetoresistance | en_US |
dc.subject | biepitaxial step junction | en_US |
dc.subject | LCMO | en_US |
dc.subject | grain boundary | en_US |
dc.title | Magnetoresistance of La0.7Ca0.3MnO3 thin film biepitaxial step junctions | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/S0921-4526(03)00261-8 | en_US |
dc.identifier.journal | PHYSICA B-CONDENSED MATTER | en_US |
dc.citation.volume | 336 | en_US |
dc.citation.issue | 3-4 | en_US |
dc.citation.spage | 267 | en_US |
dc.citation.epage | 274 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000184510200005 | - |
dc.citation.woscount | 2 | - |
Appears in Collections: | Articles |
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