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dc.contributor.authorChen, SFen_US
dc.contributor.authorChang, WJen_US
dc.contributor.authorLiu, SJen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorLin, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:40:32Z-
dc.date.available2014-12-08T15:40:32Z-
dc.date.issued2003-08-01en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0921-4526(03)00261-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/27663-
dc.description.abstractThe biepitaxial La0.7Ca0.3MnO3 (LCMO) thin films grown on SrTiO3 substrates using a buffer layer of anatase TiO2 were fabricated. The magnetoresistance (MR) of biepitaxial step junction (BSJ) across the boundary layer of biepitaxial LCMO (0 0 1) and LCMO (I 10) film was investigated. The temperature and field dependence of MR for BSJ are qualitatively similar to those obtained in other type of artificial grain boundaries with a comparable MR ratio at low temperatures. However, the observed linear current-voltage characteristic across BSJ is in sharp contrary to the commonly reported non-ohmic characteristics. The results are consistent with features predicted by the model of spin-dependent transport across a depressed magnetic ordering and metallic-like junction layer. (C) 2003 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectmagnetoresistanceen_US
dc.subjectbiepitaxial step junctionen_US
dc.subjectLCMOen_US
dc.subjectgrain boundaryen_US
dc.titleMagnetoresistance of La0.7Ca0.3MnO3 thin film biepitaxial step junctionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0921-4526(03)00261-8en_US
dc.identifier.journalPHYSICA B-CONDENSED MATTERen_US
dc.citation.volume336en_US
dc.citation.issue3-4en_US
dc.citation.spage267en_US
dc.citation.epage274en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000184510200005-
dc.citation.woscount2-
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