完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsu, YK | en_US |
dc.contributor.author | Chang, CS | en_US |
dc.contributor.author | Hsieh, WF | en_US |
dc.date.accessioned | 2014-12-08T15:40:39Z | - |
dc.date.available | 2014-12-08T15:40:39Z | - |
dc.date.issued | 2003-07-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.42.4222 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/27730 | - |
dc.description.abstract | The Er-doped GaSe crystal has been investigated by using temperature dependent photoluminescence (TDPL), a Fourier-transform infrared spectrometer (FTIR), and Hall effect measurements. The Er-doped GaSe appears to be a p-type semiconductor. The impurity level at similar to2.064 eV is observed and located at similar to64 meV above the valence band in both the as-grown and the annealed Er doped GaSe crystal. Additionally, the infrared luminescence and transmission spectra which have arisen from the intracenter transitions 4I(9/2) --> 4I(15/2), 4I(11/2) --> 4I(15/2), and 4I(13/2) --> 4I(15/2) of erbium ions have been observed at similar to0.81, 0.99, and 1.54 mum, respectively. The annealing process under excess Se atmosphere at 600degreesC for 72 h can enhance the crystal to have more active erbium ions. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | GaSe | en_US |
dc.subject | Bridgmann growth | en_US |
dc.subject | erbium | en_US |
dc.subject | photoluminescence | en_US |
dc.title | Photoluminescence study of GaSe doped with Er | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.42.4222 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
dc.citation.volume | 42 | en_US |
dc.citation.issue | 7A | en_US |
dc.citation.spage | 4222 | en_US |
dc.citation.epage | 4225 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000184662000009 | - |
dc.citation.woscount | 6 | - |
顯示於類別: | 期刊論文 |