完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lee, CC | en_US |
dc.contributor.author | Lee, CP | en_US |
dc.contributor.author | Yeh, MH | en_US |
dc.contributor.author | Lee, WI | en_US |
dc.contributor.author | Kuo, CT | en_US |
dc.date.accessioned | 2014-12-08T15:40:40Z | - |
dc.date.available | 2014-12-08T15:40:40Z | - |
dc.date.issued | 2003-07-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/27748 | - |
dc.description.abstract | In this article, a scheme for fabricating low resistance Ohmic contacts to n-GaN was developed. This approach takes advantage of Ar plasma treatment and thermal annealing in forming gas ambient. As a result, the adjustment of Ar flow rate was very effective in improving the contact resistance. After proper Ar plasma treatment, the contact resistance and specific contact resistance of as-deposited Ohmic contacts were reduced to 0.362 Omega mm and 3.9 x 10(-5) Omega cm(2), respectively. Low contact resistance (0.103 Omega mm) and specific contact resistance (3.2 x 10(-6) Omega cm(2)) were obtained after annealing in N-2 gas ambient. By performing thermal annealing in forming gas ambient, even lower contact resistance (0.093 Omega mm) and specific contact resistance (2.6 x 10(-6) Omega cm(2)) were successfully achieved, indicating that the electrical characteristics of Ohmic contacts would not be affected by the effect of hydrogen passivation of dopants in n-GaN. (C) 2003 American Vacuum Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 21 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 1501 | en_US |
dc.citation.epage | 1504 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000185080000055 | - |
dc.citation.woscount | 4 | - |
顯示於類別: | 期刊論文 |