A novel RF CMOS active inductor

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DC Field	Value	Language
dc.contributor.author	Yang, JN	en_US
dc.contributor.author	Cheng, YC	en_US
dc.contributor.author	Lee, CY	en_US
dc.date.accessioned	2014-12-08T15:40:41Z	-
dc.date.available	2014-12-08T15:40:41Z	-
dc.date.issued	2003-07-01	en_US
dc.identifier.issn	0916-8516	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27761	-
dc.description.abstract	A novel RF CMOS high Q-value active inductor is proposed in this work by using simple cascode RC feedback compensation technique. The performance of this active inductor has maximum Q-value about 1.2E6, inductance value from 3.5 nH to 4.5 nH and 3E-5Omega of minimum total equivalent loss, in the range of 1.2 GHz to 2 GHz.	en_US
dc.language.iso	en_US	en_US
dc.subject	active inductor	en_US
dc.subject	RC feedback	en_US
dc.subject	internal loss	en_US
dc.subject	Q-value	en_US
dc.title	A novel RF CMOS active inductor	en_US
dc.type	Article	en_US
dc.identifier.journal	IEICE TRANSACTIONS ON COMMUNICATIONS	en_US
dc.citation.volume	E86B	en_US
dc.citation.issue	7	en_US
dc.citation.spage	2190	en_US
dc.citation.epage	2192	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000184068500015	-
dc.citation.woscount	1	-
Appears in Collections:	Articles