標題: A novel RF CMOS active inductor
作者: Yang, JN
Cheng, YC
Lee, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: active inductor;RC feedback;internal loss;Q-value
公開日期: 1-七月-2003
摘要: A novel RF CMOS high Q-value active inductor is proposed in this work by using simple cascode RC feedback compensation technique. The performance of this active inductor has maximum Q-value about 1.2E6, inductance value from 3.5 nH to 4.5 nH and 3E-5Omega of minimum total equivalent loss, in the range of 1.2 GHz to 2 GHz.
URI: http://hdl.handle.net/11536/27761
ISSN: 0916-8516
期刊: IEICE TRANSACTIONS ON COMMUNICATIONS
Volume: E86B
Issue: 7
起始頁: 2190
結束頁: 2192
顯示於類別:期刊論文