完整後設資料紀錄
DC 欄位語言
dc.contributor.authorTojo, Yosukeen_US
dc.contributor.authorMiura, Atsushien_US
dc.contributor.authorUraoka, Yukiharuen_US
dc.contributor.authorFuyuki, Takashien_US
dc.contributor.authorYamashita, Ichiroen_US
dc.date.accessioned2014-12-08T15:40:42Z-
dc.date.available2014-12-08T15:40:42Z-
dc.date.issued2009-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.48.04C190en_US
dc.identifier.urihttp://hdl.handle.net/11536/27765-
dc.description.abstractWe proposed a new process technology, named the "bio-nano-process", in which semiconductor processing technology and biotechnology are conbined. We utilized a ferritin protein cobalt core as a memory node, and succeeded in performing the operation of floating gate memory. In this study, we undertook the reduction control of a cobalt core embedded in silicon oxide by thermal annealing. We also fabricated metal-oxide-semiconductor (MOS) capacitors with using the cobalt core and evaluated their electronic properties. As a result, we could elucidate the contribution of the metallic cobalt in the core by controlling of the ambient and temperature. We found that memory windows become large with increasing contribution of metallic cobalt. (C) 2009 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleControlled Reduction of Bionanodots for Better Charge Storage Characteristics of Bionanodots Flash Memoryen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.48.04C190en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume48en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000265652700191-
顯示於類別:會議論文


文件中的檔案:

  1. 000265652700191.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。