完整後設資料紀錄
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dc.contributor.authorHuang, KPen_US
dc.contributor.authorLin, Pen_US
dc.contributor.authorShih, HCen_US
dc.date.accessioned2014-12-08T15:40:48Z-
dc.date.available2014-12-08T15:40:48Z-
dc.date.issued2003-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.42.3598en_US
dc.identifier.urihttp://hdl.handle.net/11536/27814-
dc.description.abstractFluorinated amorphous carbon (a-C:F) films of high fluorine content were prepared by radio-frequency (RF) bias assisted electron cyclotron resonance/chemical-vapor deposition (ECR-CVD) with a variable fluorine-to-carbon (F/C) ratio of the feed gases. The films were characterized by X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (EELS) and transmission electron microscopy (TEM). A low dielectric constant of around 1.5 and high dielectric strength beyond 35 MV/cm were obtained under the as-deposited and annealed conditions, respectively. The measured huge current surge and electrical conductivity of the films were discussed on the basis of the nanovoids and sp(2)/Sp(3) bonding fractions as derived from the above characterizations. [DOI: 10.1143/JJAP.42.3598].en_US
dc.language.isoen_USen_US
dc.subjecta-C : Fen_US
dc.subjectfilmsen_US
dc.subjectECR-CVDen_US
dc.subjectdielectricen_US
dc.subjectconductivityen_US
dc.subjectbondingen_US
dc.titleStructure and electrical studies of fluorinated amorphous carbon films prepared by electron cyclotron resonance/chemical-vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.42.3598en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume42en_US
dc.citation.issue6Aen_US
dc.citation.spage3598en_US
dc.citation.epage3602en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000183927800073-
dc.citation.woscount7-
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