完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLin, CCen_US
dc.contributor.authorLai, CHen_US
dc.contributor.authorJiang, RFen_US
dc.contributor.authorShieh, HPDen_US
dc.date.accessioned2014-12-08T15:40:52Z-
dc.date.available2014-12-08T15:40:52Z-
dc.date.issued2003-05-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1556932en_US
dc.identifier.urihttp://hdl.handle.net/11536/27859-
dc.description.abstractThe exchange-bias films of ferrimagnetic/ferrimagnetic, ferromagnetic/ferromagnetic, and ferromagnetic/antiferromagnetic bilayers were fabricated to investigate their interfacial exchange energy Deltasigma. Deltasigma of TbFeCo bilayers is larger than 5 erg/cm(2) at room temperature. By varying the composition of TbFeCo layers, both positive and negative exchange bias have been observed. A highly uncompensated-spin interface model was proposed to explain the strong exchange interaction in TbFeCo bilayers. Due to the characteristics of highly uncompensated-spin interface at TbFeCo bilayers, the exchange coupling field in TbFeCo bilayers exhibited less dependence on interfacial roughness than that in IrMn/NiFe bilayers. In addition, by adjusting the composition of TbFeCo, the anisotropy of pinning layer can be manipulated and exhibits strong effects on exchange bias of TbFeCo bilayers. (C) 2003 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleHigh interfacial exchange energy in TbFeCo exchange-bias filmsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1063/1.1556932en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume93en_US
dc.citation.issue10en_US
dc.citation.spage6832en_US
dc.citation.epage6834en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000182822300136-
顯示於類別:會議論文


文件中的檔案:

  1. 000182822300136.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。