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dc.contributor.authorChang, SCen_US
dc.contributor.authorShieh, JMen_US
dc.contributor.authorDai, BTen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorLi, YHen_US
dc.contributor.authorShih, CHen_US
dc.contributor.authorTsai, MHen_US
dc.contributor.authorShue, SLen_US
dc.contributor.authorLiang, RSen_US
dc.contributor.authorWang, YLen_US
dc.date.accessioned2014-12-08T15:40:54Z-
dc.date.available2014-12-08T15:40:54Z-
dc.date.issued2003-05-01en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1565853en_US
dc.identifier.urihttp://hdl.handle.net/11536/27881-
dc.description.abstractWe demonstrate a superpolishing electrolyte, which consists of acid additives in conventional Cu polishing electrolytes (H3PO4), for efficiently planarizing Cu damascene features. The significant additive concentration gradient in features, resulting in a selective Cu dissolution rate within features, is explored as a major mechanism that yields such electrolytes with high planarization efficiency. Moreover, another additive, polyethylene glycol as a suppressor, is also employed to reduce oxygen bubbling on polished films. Consequently, a smooth surface with a complete step height elimination is obtained in a 70 mm trench after electropolishing. (C) 2003 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleSuperpolishing for planarizing copper damascene interconnectsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1565853en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume6en_US
dc.citation.issue5en_US
dc.citation.spageG72en_US
dc.citation.epageG74en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000181766400017-
dc.citation.woscount21-
Appears in Collections:Articles