完整後設資料紀錄
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dc.contributor.authorLin, Hung-Jien_US
dc.contributor.authorLin, Der-Yuhen_US
dc.contributor.authorWu, Jenq-Shinnen_US
dc.contributor.authorYang, Chu-Shouen_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorLo, Wei-Hsuanen_US
dc.contributor.authorWang, Jyh-Shyangen_US
dc.date.accessioned2014-12-08T15:40:56Z-
dc.date.available2014-12-08T15:40:56Z-
dc.date.issued2009-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.48.04C122en_US
dc.identifier.urihttp://hdl.handle.net/11536/27898-
dc.description.abstractWe have studied the manganese (Mn) composition dependence of the optical and electrical properties of ZnMnO thin films, which are grown on c-Al(2)O(3) substrates by plasma-assisted molecular beam epitaxy (PAMBE). The lattice constant and grain size are estimated by Xray diffraction (XRD), and it is found that the lattice constant increases and the grain size decreases with increasing Mn composition. When more Mn is incorporated into the ZnMnO thin films, a blue shift of the absorption edges and photoluminescence emission peaks are observed. Hall measurement shows n-type conduction behavior for all the samples. The decrease in mobility might be related with the increase in the number of impurity scattering centers, and the decrease in the carrier concentration can be attributed to the carrier quenching effect induced by the deep-level defects. The ac electrical response of ZnMnO is studied by impedance spectroscopy (IS). The equivalent RC circuit and parameters of the grain and grain boundary are determined. (C) 2009 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleOptical and Electrical Characterizations of ZnMnO Thin Films on c-Al(2)O(3)en_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.48.04C122en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume48en_US
dc.citation.issue4en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
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