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dc.contributor.authorLin, PIen_US
dc.contributor.authorLuo, CWen_US
dc.contributor.authorLiu, HSen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:40:57Z-
dc.date.available2014-12-08T15:40:57Z-
dc.date.issued2003-05-01en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0921-4526(02)02442-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/27906-
dc.description.abstractThe characteristics of optically induced bipolar THz radiation in biased photoconductive switches were investigated systematically by using free-space electro-optic sampling technique. The emitted radiation shows nearly symmetrical waveform with broadband frequency spectrum spanning over 0.1-3 THz. It was observed that the bipolar nature and the emitted frequency spectrum distribution remained unchanged on varying the optical excitation fluence, strength of biased field and the emitter gap spacing. The dynamics of emitted THz transient are in agreement with the optically induced ultrafast charge transport process driven by the biased field. (C) 2003 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectterahertz radiationen_US
dc.subjectfree-space electro-optic samplingen_US
dc.subjectphotoconductive switchesen_US
dc.titleBipolar photogenerated terahertz radiation in biased photoconductive switchesen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0921-4526(02)02442-0en_US
dc.identifier.journalPHYSICA B-CONDENSED MATTERen_US
dc.citation.volume329en_US
dc.citation.issueen_US
dc.citation.spage1651en_US
dc.citation.epage1652en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000183802700567-
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