完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng, TY | en_US |
dc.contributor.author | Lin, PI | en_US |
dc.contributor.author | Chen, SF | en_US |
dc.contributor.author | Liu, SJ | en_US |
dc.contributor.author | Juang, JY | en_US |
dc.contributor.author | Lin, JY | en_US |
dc.contributor.author | Wu, KH | en_US |
dc.contributor.author | Uen, TM | en_US |
dc.contributor.author | Gou, YS | en_US |
dc.contributor.author | Wang, RL | en_US |
dc.contributor.author | Li, HC | en_US |
dc.date.accessioned | 2014-12-08T15:41:00Z | - |
dc.date.available | 2014-12-08T15:41:00Z | - |
dc.date.issued | 2003-05-01 | en_US |
dc.identifier.issn | 0022-2291 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1023/A:1022967706861 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/27928 | - |
dc.description.abstract | Superconducting NdBa2Cu3O7-delta (NBCO) thin films with T-c=89 K have been. successfully grown on bare (1 (1) over bar 02) sapphire substrates by pulsed laser deposition (PLD). The X-ray diffraction results show that the as-grown NBCO films are all c-axis oriented with no observable second phase. The c-axis parameter decreases monotonically with increasing the deposition temperature (T-s), suggesting that the corresponding degradation of T-c for T-s>790degreesC might not originate from oxygen deficiency. It is conceived that the film-substrate reaction that occurring at the interface may cause Ba-deficiency and hence enhance Nd-Ba antisite substitutions. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Superconducting NdBa2Cu3O7-delta thin films grown on bare (1(1)over-bar02) sapphire by pulsed laser deposition | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1023/A:1022967706861 | en_US |
dc.identifier.journal | JOURNAL OF LOW TEMPERATURE PHYSICS | en_US |
dc.citation.volume | 131 | en_US |
dc.citation.issue | 3-4 | en_US |
dc.citation.spage | 557 | en_US |
dc.citation.epage | 561 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000181768000058 | - |
顯示於類別: | 會議論文 |