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dc.contributor.authorSun, KWen_US
dc.contributor.authorHuang, CLen_US
dc.contributor.authorHuang, GBen_US
dc.contributor.authorLee, HCen_US
dc.date.accessioned2014-12-08T15:41:00Z-
dc.date.available2014-12-08T15:41:00Z-
dc.date.issued2003-05-01en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0038-1098(03)00235-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/27929-
dc.description.abstractIn this work, we have studied the inter- and intra-subband scattering of hot electrons in quantum wells using the hot electron-neutral acceptor luminescence technique. We have observed direct evidence of the emission of confined optical phonons by hot electrons excited slightly above the n = 2 subband in GaAs/Al0.37Ga0.63As quantum wells. Scattering rates of photoexcited electrons via inter- and intra-subband LO phonon emission were calculated based on the dielectric continuum model. We found that, for wide wells with the Al composition of our experiments, both the calculated and experimental results suggest that the scattering of the electrons is dominated by the confined LO phonon mode. In the calculations, scatterings among higher subbands are also dominated by the same type of phonon at well width of 10 nm. (C) 2003 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectquantum wellsen_US
dc.subjectelectron-phonon interactionsen_US
dc.subjectinelastic scatteringen_US
dc.subjectluminescenceen_US
dc.titleInter- and intra-subband relaxation of hot electrons in GaAs/AlGaAs quantum wellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0038-1098(03)00235-7en_US
dc.identifier.journalSOLID STATE COMMUNICATIONSen_US
dc.citation.volume126en_US
dc.citation.issue9en_US
dc.citation.spage519en_US
dc.citation.epage522en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000182953300008-
dc.citation.woscount1-
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