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dc.contributor.authorChen, PLen_US
dc.contributor.authorKuo, CTen_US
dc.contributor.authorTsai, TGen_US
dc.contributor.authorWu, BWen_US
dc.contributor.authorHsu, CCen_US
dc.contributor.authorPan, FMen_US
dc.date.accessioned2014-12-08T15:41:02Z-
dc.date.available2014-12-08T15:41:02Z-
dc.date.issued2003-04-28en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1571661en_US
dc.identifier.urihttp://hdl.handle.net/11536/27948-
dc.description.abstractOrdered nanodot arrays of titanium oxides were prepared from TiN/Al films on the silicon substrate by electrochemical anodization of a TiN layer using a nanoporous anodic aluminum oxide film as the template. The microstructure of the nanodot arrays was studied by transmission electron microscopy and scanning electron microscopy, and the chemical composition of nanodots was analyzed by electron energy loss spectroscopy. The as-prepared nanodots are basically composed of amorphous TiOx with a hexagonal arrangement and an average diameter of about 60 nm. Using this approach, it is expected that nanodot arrays of various oxide semiconductors can be achieved. (C) 2003 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleSelf-organized titanium oxide nanodot arrays by electrochemical anodizationen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1571661en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume82en_US
dc.citation.issue17en_US
dc.citation.spage2796en_US
dc.citation.epage2798en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000182399700017-
dc.citation.woscount53-
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