完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Meng, CC | en_US |
dc.contributor.author | Lu, SS | en_US |
dc.contributor.author | Chiang, MH | en_US |
dc.contributor.author | Chen, HC | en_US |
dc.date.accessioned | 2014-12-08T15:41:05Z | - |
dc.date.available | 2014-12-08T15:41:05Z | - |
dc.date.issued | 2003-04-17 | en_US |
dc.identifier.issn | 0013-5194 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1049/el:20030458 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/27956 | - |
dc.description.abstract | A wideband GaInP/GaAs heterojunction bipolar transistor (HBT) micromixer from DC to 8 GHz with I I dB single-ended conversion gain is demonstrated. The input return loss is better than 10 dB for frequencies up to 9 GHz. The single-to-differential input stage in a Gilbert micromixer renders good wideband frequency response and eliminates the need for common-mode rejection. IP1dB = -17 dBm and IIP3 = -7 dBm are achieved for a small local oscillator power of -2 dBm when LO = 5.35 GHz and PF = 5.7 GHz. | en_US |
dc.language.iso | en_US | en_US |
dc.title | DC to 8 GHz 11 dB gain Gilbert micromixer using GaInP/GaAs HBT technology | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1049/el:20030458 | en_US |
dc.identifier.journal | ELECTRONICS LETTERS | en_US |
dc.citation.volume | 39 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | 637 | en_US |
dc.citation.epage | 638 | en_US |
dc.contributor.department | 電信工程研究所 | zh_TW |
dc.contributor.department | Institute of Communications Engineering | en_US |
dc.identifier.wosnumber | WOS:000182656400001 | - |
dc.citation.woscount | 12 | - |
顯示於類別: | 期刊論文 |