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dc.contributor.authorLin, LCen_US
dc.contributor.authorMeng, HFen_US
dc.contributor.authorShy, JTen_US
dc.contributor.authorHorng, SFen_US
dc.contributor.authorYu, LSen_US
dc.contributor.authorChen, CHen_US
dc.contributor.authorLiaw, HHen_US
dc.contributor.authorHuang, CCen_US
dc.contributor.authorPeng, GYen_US
dc.contributor.authorChen, SAen_US
dc.date.accessioned2014-12-08T15:41:07Z-
dc.date.available2014-12-08T15:41:07Z-
dc.date.issued2003-04-04en_US
dc.identifier.issn0379-6779en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0379-6779(02)00517-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/27971-
dc.description.abstractThe triplet to singlet exciton formation ratio in a poly(2-methoxy-5(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) light-emitting-diode is measured by comparing the triplet induced-absorptions with optical and electric excitations at same singlet exciton density. The ratio is a strong universal decreasing function of the averaged electric field. Using 4 ns for singlet to triplet intersystem crossing time, the ratio is significantly larger than the spin-statistics value 3 at intermediate field but is reduced to about 1 for higher field.en_US
dc.language.isoen_USen_US
dc.subjecttriplet excitonen_US
dc.subjectlight-emitting-diodeen_US
dc.titleTriplet exciton formation ratio in poly(p-phenylene-vinylene) light-emitting diodeen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0379-6779(02)00517-9en_US
dc.identifier.journalSYNTHETIC METALSen_US
dc.citation.volume135en_US
dc.citation.issue1-3en_US
dc.citation.spage425en_US
dc.citation.epage426en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000182533700198-
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