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dc.contributor.authorShye, DCen_US
dc.contributor.authorChiou, BSen_US
dc.contributor.authorHwang, CCen_US
dc.contributor.authorJaing, CCen_US
dc.contributor.authorHsu, HWen_US
dc.contributor.authorChen, JSen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:41:08Z-
dc.date.available2014-12-08T15:41:08Z-
dc.date.issued2003-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.42.1680en_US
dc.identifier.urihttp://hdl.handle.net/11536/27992-
dc.description.abstractThe amorphous (Ba,Sr)TiO3 (alpha-BST) films sputtered onto the Pt/TiN/Ti/Si substrates are greatly improved using the excimer laser annealing (ELA) technique of wavelength 248 nm at low substrate temperature 300degreesC. The dielectric constant of the alpha-BST film is remarkably enhanced from 80 to over 250 after ELA treatment. The heat conduction analysis indicates that a very shallow light absorption depth of the wavelength 248 nm for the BST film behaves an excellent thermal property, which doesn't,damage the underlayer films during ELA treatment. Besides, the leakage current of ELA-BST films is strongly influenced by the laser energy fluence (LEF). The detailed mechanisms of the crystallinity and the electric properties am systematically studied in this report.en_US
dc.language.isoen_USen_US
dc.subjectBST filmsen_US
dc.subjectexcimer laser annealingen_US
dc.subjectlight absorptionen_US
dc.subjectheat conductionen_US
dc.subjectlow substrate temperatureen_US
dc.subjectcrystallinityen_US
dc.titleThe effects of post excimer laser annealing on (Ba,Sr)TiO3 thin films at low substrate temperaturesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.42.1680en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume42en_US
dc.citation.issue4Aen_US
dc.citation.spage1680en_US
dc.citation.epage1685en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000182892300041-
dc.citation.woscount11-
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