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dc.contributor.authorLi, YMen_US
dc.contributor.authorLu, HMen_US
dc.date.accessioned2014-12-08T15:41:08Z-
dc.date.available2014-12-08T15:41:08Z-
dc.date.issued2003-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.42.2404en_US
dc.identifier.urihttp://hdl.handle.net/11536/27995-
dc.description.abstractWe study electron energy states in three-dimensional (313) narrow-gap semiconductor quantum rings with ellipsoidal-shape torus (EST) and cut-bottom EST (CBEST) under an applied magnetic field. Our model includes the effective one-electronic-band Hamiltonian, the energy- and position-dependent electron effective mass approximation, and the Ben Daniel-Duke boundary condition. It is solved by the nonlinear iterative method to obtain a "self-consistent" solution numerically. The electron energy dependence on the inner radius, height, and lateral width is investigated for InAs/GaAs quantum rings with EST and CBE T shapes. The height and lateral width play a crucial role in varying the energy spectra of the rings. When the magnetic field is applied on a fixed-size CBEST ring, we find that there is a nonperiodical transition among the lowest electron energy states. Compared with the well-known ID Aharonov-Bohm periodical oscillation, the electron energy levels increase and oscillate nonperiodically when the magnetic field is increased. Our calculation for single-electron magnetization shows that the magnetization is nonperiodical and is a negative function of magnetic field.en_US
dc.language.isoen_USen_US
dc.subjectquantum ringsen_US
dc.subjectelectron energy statesen_US
dc.subjectmagnetic fielden_US
dc.subjectmagnetizationen_US
dc.subjectmodeling and simulationen_US
dc.titleGeometric variations and magnetic field effects on electron energy states of InAs/GaAs quantum ringsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.42.2404en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume42en_US
dc.citation.issue4Ben_US
dc.citation.spage2404en_US
dc.citation.epage2407en_US
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000183283700129-
Appears in Collections:Conferences Paper


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