Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-Buffered Si (100) substrates

Abstract

The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K, respectively. A magnetoresistance with a Deltarho/rho(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T-2- to T-3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.