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dc.contributor.authorLiu, SJen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.contributor.authorChen, JMen_US
dc.contributor.authorLin, JYen_US
dc.date.accessioned2014-12-08T15:41:13Z-
dc.date.available2014-12-08T15:41:13Z-
dc.date.issued2003-03-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1544072en_US
dc.identifier.urihttp://hdl.handle.net/11536/28035-
dc.description.abstractUnoccupied states of the (110) YBa(2)Cu(3)O(6.)9 (YBCO) thin films were investigated by the Eparallel toab and Eparallel toc polarized O 1s x-ray absorption near edge structure (XANES) spectroscopy. With correction of the self-absorption effect, the Eparallel toab O 1s XANES spectra of the (110) YBCO films obtained from the normal incidence geometry and grazing incidence geometry are very similar. After the self-absorption correction, the Eparallel toc spectrum of the (110) YBCO film obtained from the normal incidence geometry is almost identical to that of the (001) YBCO film obtained from the grazing incidence geometry. Hole distribution over the different oxygen sites has been derived. The hole number in the apical sites in some thin films obtained in the present. investigation is larger than that from the previous x-ray absorption studies of single crystals and from the theoretical calculations. The comparison of the XANES spectra between the (001) and (110) YBCO thin films is also presented. (C) 2003 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleSoft x-ray absorption spectroscopy studies of (110) YBa2Cu3O6.9 thin filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1544072en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume93en_US
dc.citation.issue5en_US
dc.citation.spage2834en_US
dc.citation.epage2838en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000181307000081-
dc.citation.woscount7-
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