Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, YM | en_US |
dc.contributor.author | Lu, HM | en_US |
dc.date.accessioned | 2014-12-08T15:41:17Z | - |
dc.date.available | 2014-12-08T15:41:17Z | - |
dc.date.issued | 2003-03-01 | en_US |
dc.identifier.issn | 0916-8524 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28072 | - |
dc.description.abstract | In this paper, we investigate the electron-hole energy states and energy gap in three-dimensional (313) InAs/GaAs quantum rings and dots with different shapes under external magnetic fields. Our realistic model formulation includes: (i) the effective mass Hamiltonian in non-parabolic approximation for electrons, (ii) the effective mass Hamiltonian in parabolic approximation for holes, (iii) the position- and energy-dependent quasi-particle effective mass approximation for electrons, (iv) the finite hard wall confinement potential, and (v) the Ben Daniel-Duke boundary conditions. To solve the 3D non-linear problem without any fitting parameters, we have applied the nonlinear iterative method to obtain self-consistent solutions. Due to the penetration of applied magnetic fields into torus ring region, for ellipsoidal- and rectangular-shaped quantum rings we find nonperiodical oscillations of the energy gap between the lowest electron and hole states as a function of external magnetic fields. The nonperiodical oscillation is different from 1D periodical argument and strongly dependent on structure shape and size. The result is useful to study magneto-optical properties of the nanoscale quantum rings and dots. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | energy states | en_US |
dc.subject | magnetic field effects | en_US |
dc.subject | quantum rings and dots | en_US |
dc.subject | InAs/GaAs | en_US |
dc.subject | computer simulation | en_US |
dc.title | An investigation of magnetic field effects on energy states for nanoscale InAs/GaAs quantum rings and dots | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.journal | IEICE TRANSACTIONS ON ELECTRONICS | en_US |
dc.citation.volume | E86C | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 466 | en_US |
dc.citation.epage | 473 | en_US |
dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
dc.identifier.wosnumber | WOS:000181421500032 | - |
Appears in Collections: | Conferences Paper |