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dc.contributor.authorChang, SCen_US
dc.contributor.authorShieh, JMen_US
dc.contributor.authorDai, BTen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorWang, YLen_US
dc.date.accessioned2014-12-08T15:41:17Z-
dc.date.available2014-12-08T15:41:17Z-
dc.date.issued2003-03-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://hdl.handle.net/11536/28079-
dc.description.abstractThe leveler, 2-mercaptopyridine (2MP), increases the filling power of copper electroplating electrolytes in plating 0.15 mum vias, but forms the plated copper metals of small-grained column structures with high resistivity. In this,study, we used rapid thermal annealing (RTA) to effectively improve the film quality. After RTA at 400 degreesC for 30 s, the resistivity of Cu deposits was reduced from similar to16.1 to similar to2.4 muOmegacm. Moreover, the Cu(111) intensity of Cu deposits increased after RTA annealing. (C) 2003 American Vacuum Society. [DOI: 10.1116/1.1562641].en_US
dc.language.isoen_USen_US
dc.titleImproving the quality of electroplated copper films by rapid thermal annealingen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume21en_US
dc.citation.issue2en_US
dc.citation.spage858en_US
dc.citation.epage861en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000182604000039-
dc.citation.woscount1-
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