完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | WU, CC | en_US |
dc.contributor.author | TAI, K | en_US |
dc.contributor.author | HAUNG, KF | en_US |
dc.date.accessioned | 2014-12-08T15:04:18Z | - |
dc.date.available | 2014-12-08T15:04:18Z | - |
dc.date.issued | 1993-10-28 | en_US |
dc.identifier.issn | 0013-5194 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2810 | - |
dc.description.abstract | Reliability studies of gain-guieded 0.85 mum GaAs/AlGaAs quantum well surface emitting lasers were performed on 45 randomly selected lasers operated at 25, 50 or 90-degrees-C with biased currents up to 15 mA (about four times the threshold values). At 25-degrees-C, no noticeable degradation was seen after 5000 h of operation. A 14% reduction of power was seen at 50-degrees-C after 2700h. A faster degradation on power output was seen at 90-degrees-C, though the lasers are still functional after 1000h. The mean time toward failure (MTTF) of these lasers operated at 25-degrees-C and 15mA is extrapolated to be approximately 5 x 10(4)h. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | SEMICONDUCTOR LASERS | en_US |
dc.subject | RELIABILITY | en_US |
dc.title | RELIABILITY STUDIES OF 0.85 MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS - 50000-H MTTF AT 25-DEGREES-C | en_US |
dc.type | Article | en_US |
dc.identifier.journal | ELECTRONICS LETTERS | en_US |
dc.citation.volume | 29 | en_US |
dc.citation.issue | 22 | en_US |
dc.citation.spage | 1953 | en_US |
dc.citation.epage | 1954 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:A1993NE96800034 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |