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dc.contributor.authorWU, CCen_US
dc.contributor.authorTAI, Ken_US
dc.contributor.authorHAUNG, KFen_US
dc.date.accessioned2014-12-08T15:04:18Z-
dc.date.available2014-12-08T15:04:18Z-
dc.date.issued1993-10-28en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/11536/2810-
dc.description.abstractReliability studies of gain-guieded 0.85 mum GaAs/AlGaAs quantum well surface emitting lasers were performed on 45 randomly selected lasers operated at 25, 50 or 90-degrees-C with biased currents up to 15 mA (about four times the threshold values). At 25-degrees-C, no noticeable degradation was seen after 5000 h of operation. A 14% reduction of power was seen at 50-degrees-C after 2700h. A faster degradation on power output was seen at 90-degrees-C, though the lasers are still functional after 1000h. The mean time toward failure (MTTF) of these lasers operated at 25-degrees-C and 15mA is extrapolated to be approximately 5 x 10(4)h.en_US
dc.language.isoen_USen_US
dc.subjectSEMICONDUCTOR LASERSen_US
dc.subjectRELIABILITYen_US
dc.titleRELIABILITY STUDIES OF 0.85 MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS - 50000-H MTTF AT 25-DEGREES-Cen_US
dc.typeArticleen_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume29en_US
dc.citation.issue22en_US
dc.citation.spage1953en_US
dc.citation.epage1954en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:A1993NE96800034-
dc.citation.woscount7-
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