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dc.contributor.authorChung, SJen_US
dc.contributor.authorChen, SMen_US
dc.contributor.authorLee, YCen_US
dc.date.accessioned2014-12-08T15:41:19Z-
dc.date.available2014-12-08T15:41:19Z-
dc.date.issued2003-02-01en_US
dc.identifier.issn0018-9480en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMTT.2002.807814en_US
dc.identifier.urihttp://hdl.handle.net/11536/28112-
dc.description.abstractA novel two-port bi-directional amplifier, which may simultaneously amplify the waves coming from both ports, is proposed and demonstrated in this paper. Using this amplifier, a two-element active Van Atta retrodirective array is implemented and compared to a four-element passive array. The bi-directional amplifier is constructed by two identical one-port reflection-type amplifiers and a 3-dB 90degrees hybrid. The reflection-type amplifier is designed using an FET with a single-power-supply configuration. A quarter-wavelength microstrip radial stub is connected to the device's source terminal to narrow down the negative-resistance frequency range so as to avoid oscillation at undesired frequencies. The fabricated bi-directional amplifier provides the transmission gain over the frequency band from 5.76 to 6.88 GHz, with a peak value of 9.1 dB at 6.04 GHz. Printed Yagi antennas with four directors are adopted to build both the active and passive Van Atta arrays. The 3-dB back-scattering beamwidth of the active array is measured as wide as 74degrees. Finally, it is observed from the measurements that, although only half of the antenna elements are used, the active Van Atta array produces a back-scattering field level 4.5 dB,, on average, higher than the passive one does. This verifies the performance of the bi-directional amplifier.en_US
dc.language.isoen_USen_US
dc.subjectbi-directional amplifieren_US
dc.subjectprinted Yagi antennaen_US
dc.subjectreflection-type amplifieren_US
dc.subjectretrodirective arrayen_US
dc.titleA novel bi-directional amplifier with applications in active Van Atta retrodirective arraysen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TMTT.2002.807814en_US
dc.identifier.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUESen_US
dc.citation.volume51en_US
dc.citation.issue2en_US
dc.citation.spage542en_US
dc.citation.epage547en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000180980100030-
dc.citation.woscount26-
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