標題: Effects of post-oxygen plasma treatment on Pt/(Ba,Sr)TiO3/Pt capacitors at low substrate temperatures
作者: Shye, DC
Hwang, CC
Lai, MJ
Jaing, CC
Chen, JS
Huang, S
Juang, MH
Chiou, BS
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: BST films;leakage current;oxygen vacancies;oxygen plasma;low temperature
公開日期: 1-Feb-2003
摘要: We investigated how oxygen plasma post-treatment improves leakage characteristics of Pt/(Ba,Sr)TiO3 (BST)/Pt capacitors prepared by the radio-frequency (RF) cosputtering technique. Experimental results indicate that oxygen plasma treatment can effectively passivate the oxygen vacancies of (Ba,Sr)TiO3 (BST) films, thus decreasing the electric conduction paths of leakage currents. By this low-temperature (250degreesC), and short-duration (similar to5 min) process, the leakage current is reduced by as many as two orders of magnitude. The reliability characteristics of time-dependent dielectric breakdown (TDDB) are improved as well. However, the usage of oxygen plasma treatment is not unrestricted. Plasma treatment for an extended period (more than 10 min) degrades both the leakage and reliability characteristics, due to plasma damage. Excellent electrical characteristics, including low leakage current (1.5 x 10(-8) A/cm(2)) under 0.1 MV/cm, high dielectric constant (288), and a lifetime longer than 10 years under 2 MV/cm can be achieved. Therefore, the proposed technique for as-deposited BST films is a highly promising means of improving the electrical characteristics of BST thin films.
URI: http://dx.doi.org/10.1143/JJAP.42.549
http://hdl.handle.net/11536/28115
ISSN: 0021-4922
DOI: 10.1143/JJAP.42.549
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 42
Issue: 2A
起始頁: 549
結束頁: 553
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