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dc.contributor.authorChen, Men_US
dc.contributor.authorChen, CMen_US
dc.contributor.authorShi, SCen_US
dc.contributor.authorChen, CFen_US
dc.date.accessioned2014-12-08T15:41:20Z-
dc.date.available2014-12-08T15:41:20Z-
dc.date.issued2003-02-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.42.614en_US
dc.identifier.urihttp://hdl.handle.net/11536/28116-
dc.description.abstractVertically aligned carbon nanotubes (CNTs) with multiwalled structures were successfully grown on a Fe-deposited Si substrate at low temperatures below 300 degreesC by microwave plasma chemical vapor deposition using of a CH4-CO2 gas mixture. The low temperature would be beneficial for reducing the diameter of CNTs but it will also decrease the growth rate on the substrate. The low-temperature growth of CNTs was achieved by decreasing both the microwave power and the total gas pressure. The constituents of the gas mixture are also key factors in chemical vapor deposition. After deposition, the microstructure morphology of CNTs was observed by using scanning electron microscope and high-resolution transmission microscope. The results showed that even at low temperature a high yield of carbon nanotubes with a high emission current density and a small diameter is obtained. Vertically aligned multiwalled CNTs with a diameter about 12 nm were investigated by scanning electron microscope (SEM) and high-resolution transmission electron microscope (HRTEM).en_US
dc.language.isoen_USen_US
dc.subjectlow temperatureen_US
dc.subjectcarbon nanotubesen_US
dc.subjectCH4-CO2 gas mixtureen_US
dc.subjectMPCVDen_US
dc.subjecthigh yielden_US
dc.titleLow-temperature synthesis multiwalled carbon nanotubes by microwave plasma chemical vapor deposition using CH4-CO2 gas mixtureen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.42.614en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume42en_US
dc.citation.issue2Aen_US
dc.citation.spage614en_US
dc.citation.epage619en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000181805200054-
dc.citation.woscount25-
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