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dc.contributor.authorLiu, PTen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorYan, STen_US
dc.contributor.authorLi, CHen_US
dc.contributor.authorSze, SMen_US
dc.date.accessioned2014-12-08T15:41:21Z-
dc.date.available2014-12-08T15:41:21Z-
dc.date.issued2003-02-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1535204en_US
dc.identifier.urihttp://hdl.handle.net/11536/28128-
dc.description.abstractElectrical transport mechanisms in a low-permittivity aromatic hydrocarbon SiLK have been characterized using metal/SiLK/Si capacitors under both thermal and electric field stressing. Two distinct transport mechanisms dominate the leakage behavior of the polymer SiLK with Al and Cu electrodes, respectively. Al-electrode capacitors show Schottky-emission (SE)-type leakage behavior while Poole-Frenkel (PF) conduction resulted from trap generation in the SiLK polymer is responsible for the leakage of Cu-electrode capacitors. The trap barrier height has been extracted from the temperature dependence of leakage current. Copper penetration into the SiLK polymer leads to the generation of trap centers and seriously deteriorates dielectric characteristics. The transition of leakage conduction from SE to PF will exponentially lead to the insulating failure of the SiLK polymer. (C) 2003 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleElectrical transport phenomena in aromatic hydrocarbon polymeren_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1535204en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume150en_US
dc.citation.issue2en_US
dc.citation.spageF7en_US
dc.citation.epageF10en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000180517000043-
dc.citation.woscount17-
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