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dc.contributor.authorChen, CCen_US
dc.contributor.authorChen, HCen_US
dc.contributor.authorHsu, MCen_US
dc.contributor.authorHsieh, WHen_US
dc.contributor.authorKuan, CHen_US
dc.contributor.authorWang, SYen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:41:22Z-
dc.date.available2014-12-08T15:41:22Z-
dc.date.issued2003-02-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JQE.2002.807175en_US
dc.identifier.urihttp://hdl.handle.net/11536/28141-
dc.description.abstractPhotoelectron relaxation in the second miniband of a superlattice was studied with a high-pass energy filter at one end of the superlattice. By analyzing the spectral responses with different biases across the energy filter, the photoelectron distribution and relaxation in the second miniband of the superlattice can be resolved. In this paper, a model based on the rate equation is proposed to extract the related parameters of the photoelectron transport. The photoelectrons suffer from both intraminiband and interminiband relaxation. The extracted interminiband relaxation time is 11 ps, while the intraminiband one is in the sulipicosecond range. In addition, this structure can also be utilized as an infrared photodetector. Our analysis shows that the fast intraminiband relaxation is the dominant mechanism of the maximum achievable responsivity of the detector and the theoretical model not only provides the insight of the photoelectron transport in the superlattice miniband but also is useful for designing a superlattice infrared photodetector.en_US
dc.language.isoen_USen_US
dc.subjectinfrared photodetectoren_US
dc.subjectintersubbanden_US
dc.subjectquantum-well infrared photodetectoren_US
dc.subjectsuperlatticeen_US
dc.titleRelaxation mechanisms of the photoelectrons in the second miniband of a superlattice structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JQE.2002.807175en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume39en_US
dc.citation.issue2en_US
dc.citation.spage306en_US
dc.citation.epage313en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000180634200013-
dc.citation.woscount2-
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