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dc.contributor.authorChen, JMen_US
dc.contributor.authorLiu, SJen_US
dc.contributor.authorChang, CFen_US
dc.contributor.authorLin, JYen_US
dc.contributor.authorGou, YSen_US
dc.contributor.authorYang, HDen_US
dc.date.accessioned2019-04-03T06:38:03Z-
dc.date.available2019-04-03T06:38:03Z-
dc.date.issued2003-01-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.67.014502en_US
dc.identifier.urihttp://hdl.handle.net/11536/28170-
dc.description.abstractUsing high-resolution O K-edge x-ray absorption near-edge-structure (XANES) spectroscopy, unoccupied states of the YxPr1-xBa2Cu3O7 (x=0-1) thin films and polycrystalline Pr1-xCaxBa2Cu3O7 (x=0-0.3) as well as R0.8Pr0.2Ba2Cu3O7 samples (R=Tm, Dy, Gd, and Sm) are investigated. In YxPr1-xBa2Cu3O7, hole numbers in the CuO2 planes decrease significantly with increasing Pr doping level. Hole carriers generated via Ca doping in Pr1-xCaxBa2Cu3O7 are directed predominantly into both the Zhang-Rice and Fehrenbacher-Rice (FR) states, while those in the CuO3 ribbons remain almost unchanged with Ca substitution. In R0.8Pr0.2Ba2Cu3O7, the hole content in the CuO2 planes decreases monotonically with increasing ionic size of the R3+ ions, confirming the hole depletion effect based on the Pr 4f-O 2p hybridization. We demonstrate the spectroscopic evidence of the existence of the FR states. The present XANES results provide a deeper understanding of the nature of hybridization and the origin of the ionic size effect.en_US
dc.language.isoen_USen_US
dc.titleSoft x-ray absorption spectroscopy studies of doped Pr-containing cupratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.67.014502en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume67en_US
dc.citation.issue1en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000180830400072en_US
dc.citation.woscount10en_US
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