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dc.contributor.authorTsai, CJen_US
dc.contributor.authorHuang, CHen_US
dc.contributor.authorLu, HHen_US
dc.date.accessioned2014-12-08T15:41:28Z-
dc.date.available2014-12-08T15:41:28Z-
dc.date.issued2003en_US
dc.identifier.issn0149-6395en_US
dc.identifier.urihttp://hdl.handle.net/11536/28210-
dc.identifier.urihttp://dx.doi.org/10.1081/SS-120018818en_US
dc.description.abstractThis study presented a fine water spray technique to remove acidic/basic gas particulate from the make-up air of a semiconductor manufacturing plant. The concentration of air pollutants was measured at the inlet and the outlet of the device with the help of HDS (Honeycomb Denuder System) samplers followed by sample analysis. Results show that the removal efficiency of the fine water spray device for gas pollutants, i.e., HF, HCl, HNO2, HNO3, SO2, and NH3 was higher than that for ionic species, i.e., Cl-, NO3-, SO42- and NH4+ in fine particulates. For example, the removal efficiency was 185.7 +/- 7.8 and 66.2 +/- 22.3% for SO2 and NH3, respectively, whose inlet concentration ranged from 3.1 +/- 1.4 and 13.2 +/- 6.9 ppb, respectively. When gas pollutant concentration was at low level, it was observed that the concentration at the outlet was close to that at the inlet of the fine water spray device. This is due to the reduction of the concentration gradient at the gas-liquid interface, which lowers the absorption efficiency.en_US
dc.language.isoen_USen_US
dc.subjectair pollutantsen_US
dc.subjectfine water supplyen_US
dc.subjectremoval efficiencyen_US
dc.titleRemoval of air pollutants in the make-up air of a semiconductor plant by fine water sprayen_US
dc.typeArticleen_US
dc.identifier.doi10.1081/SS-120018818en_US
dc.identifier.journalSEPARATION SCIENCE AND TECHNOLOGYen_US
dc.citation.volume38en_US
dc.citation.issue6en_US
dc.citation.spage1429en_US
dc.citation.epage1436en_US
dc.contributor.department環境工程研究所zh_TW
dc.contributor.departmentInstitute of Environmental Engineeringen_US
dc.identifier.wosnumberWOS:000182291700011-
dc.citation.woscount5-
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