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dc.contributor.authorHsu, SCen_US
dc.contributor.authorWhang, WTen_US
dc.contributor.authorChen, SCen_US
dc.date.accessioned2014-12-08T15:41:34Z-
dc.date.available2014-12-08T15:41:34Z-
dc.date.issued2003en_US
dc.identifier.issn1022-9760en_US
dc.identifier.urihttp://hdl.handle.net/11536/28260-
dc.identifier.urihttp://dx.doi.org/10.1023/A:1021399617498en_US
dc.description.abstractLight emitting polyimide (PI) thin films are successfully prepared from two kinds of diamines: 2,5-Bis(4-aminophenyl)-1,3,4-oxadiazole (BAO) and 4,4'-(9-Fluorenylidene)dianiline (BAPF) reacting with 4,4'-(Hexafluoroisopropylidene)diphthalic anhydride (6FDA) by vapor deposition polymerization (VDP). We succeed to reduce the thickness of the thin polyimide film to 150 Angstrom, and the threshold voltage of BAO-6FDA and BAPF-6FDA PI light-emitting diodes to 4.5 V and 6.5 V respectively. The root mean square of the surface roughness of the BAO-6FDA and BAPF-6FDA PI films are 8.8 Angstrom and 4.7 Angstrom respectively. But that of the BAO-6FDA film from wet coating process is 37.1 Angstrom. Apparently, VDP process is the better way to produce smooth polyimide film. The BAO-6FDA LED film emits a broader electroluminscence (EL) band, covering the full range of visible light (400 nm to 700 nm), than the BAPF-6FDA LED. However, the electroluminescence efficiency of BAPF-6FDA LED device is better than BAO-6FDA LED device. It is due to the better balance on the hole and electron injection in the former and better intermolecular charge transfer.en_US
dc.language.isoen_USen_US
dc.subjectlight-emitting diodeen_US
dc.subjectpolyimideen_US
dc.subjectvapor deposition polymerization (VDP)en_US
dc.titleElectroluminescence characteristics of aromatic polyimides by vapor deposition polymerizationen_US
dc.typeArticleen_US
dc.identifier.doi10.1023/A:1021399617498en_US
dc.identifier.journalJOURNAL OF POLYMER RESEARCH-TAIWANen_US
dc.citation.volume10en_US
dc.citation.issue1en_US
dc.citation.spage7en_US
dc.citation.epage12en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000183869400002-
dc.citation.woscount11-
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