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dc.contributor.authorChang, HLen_US
dc.contributor.authorLin, CHen_US
dc.contributor.authorKuo, CTen_US
dc.date.accessioned2014-12-08T15:41:38Z-
dc.date.available2014-12-08T15:41:38Z-
dc.date.issued2002-12-02en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0040-6090(02)00749-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/28319-
dc.description.abstractCatalyst-assisted carbon nanotubes (CNTs) and carbon nano-rods were synthesized on the patterned or un-patterned Si wafer by microwave plasma chemical vapor deposition, using iron or cobalt silicide catalysts. Controllable carbon nanostructures were achieved by manipulating carbon and nitrogen concentration in the source gases, catalyst materials, and patterned wafer application. CNTs were synthesized under a high ratio of CH4/H-2 = 0.1, while carbon nano-rods were synthesized under a low ratio of CH4/H-2=0.01. Introducing N-2 gas into CH4/H-2 source gases gives rise to bamboo-like CNTs formation. Selective CNTs depositions were applied on (a) parallel Fe-coated line arrays, (b) CoSix-coated hole arrays. This is a novel method that is compatible with Si microelectronic device manufacturing. The field emission results indicate that the emission current density can be above 1 mA/cm(2) at 3.97 V/mum, and hollow like CNTs belong to better emission current than bamboo-like CNTs. Growth models of different carbon nanostructures are proposed. (C) 2002 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectcarbonen_US
dc.subjectfield emissionen_US
dc.subjectchemical vapor depositionen_US
dc.subjectcatalysisen_US
dc.titleIron and cobalt silicide catalysts-assisted carbon nanostructures on the patterned Si substratesen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0040-6090(02)00749-6en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume420en_US
dc.citation.issueen_US
dc.citation.spage219en_US
dc.citation.epage224en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000179922500037-
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