完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, HL | en_US |
dc.contributor.author | Lin, CH | en_US |
dc.contributor.author | Kuo, CT | en_US |
dc.date.accessioned | 2014-12-08T15:41:38Z | - |
dc.date.available | 2014-12-08T15:41:38Z | - |
dc.date.issued | 2002-12-02 | en_US |
dc.identifier.issn | 0040-6090 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/S0040-6090(02)00749-6 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28319 | - |
dc.description.abstract | Catalyst-assisted carbon nanotubes (CNTs) and carbon nano-rods were synthesized on the patterned or un-patterned Si wafer by microwave plasma chemical vapor deposition, using iron or cobalt silicide catalysts. Controllable carbon nanostructures were achieved by manipulating carbon and nitrogen concentration in the source gases, catalyst materials, and patterned wafer application. CNTs were synthesized under a high ratio of CH4/H-2 = 0.1, while carbon nano-rods were synthesized under a low ratio of CH4/H-2=0.01. Introducing N-2 gas into CH4/H-2 source gases gives rise to bamboo-like CNTs formation. Selective CNTs depositions were applied on (a) parallel Fe-coated line arrays, (b) CoSix-coated hole arrays. This is a novel method that is compatible with Si microelectronic device manufacturing. The field emission results indicate that the emission current density can be above 1 mA/cm(2) at 3.97 V/mum, and hollow like CNTs belong to better emission current than bamboo-like CNTs. Growth models of different carbon nanostructures are proposed. (C) 2002 Elsevier Science B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | carbon | en_US |
dc.subject | field emission | en_US |
dc.subject | chemical vapor deposition | en_US |
dc.subject | catalysis | en_US |
dc.title | Iron and cobalt silicide catalysts-assisted carbon nanostructures on the patterned Si substrates | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/S0040-6090(02)00749-6 | en_US |
dc.identifier.journal | THIN SOLID FILMS | en_US |
dc.citation.volume | 420 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 219 | en_US |
dc.citation.epage | 224 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000179922500037 | - |
顯示於類別: | 會議論文 |