完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, TC | en_US |
dc.contributor.author | Tsai, TM | en_US |
dc.contributor.author | Liu, PT | en_US |
dc.contributor.author | Mor, YS | en_US |
dc.contributor.author | Chen, CW | en_US |
dc.contributor.author | Mei, YJ | en_US |
dc.contributor.author | Sheu, JT | en_US |
dc.contributor.author | Tseng, TY | en_US |
dc.date.accessioned | 2014-12-08T15:41:39Z | - |
dc.date.available | 2014-12-08T15:41:39Z | - |
dc.date.issued | 2002-12-02 | en_US |
dc.identifier.issn | 0040-6090 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/S0040-6090(02)00940-9 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28323 | - |
dc.description.abstract | An organic low dielectric constant (low-k) material, hybrid-organic-siloxane-polymer. (HOSP), is integrated into multilevel interconnection using X-ray exposure technology. In conventional IC integration processes, photoresist (PR) stripping with O-2 plasma and wet chemical stripper is an inevitable step. However, dielectric degradation often occurs when low-k dielectrics undergo the PR stripping process. This limits the application of incorporating low-k material into semiconductor fabrication. In order to overcome the integration issue, a novel pattern method, X-ray direct patterning is proposed. In this technology, the dielectric regions illuminated by X-ray will be cross-linked, forming the desired patterns. At the same time, the regions without X-ray illumination are dissolvable in a solvent of HOSP film. Direct-patterning processes have several advantages: (1) they do not need PR to define patterns; thereby the damage from PR stripping can be eliminated, (2) the complex etching on low-k dielectrics can be eliminated, (3) the process steps are simplified. In this work, we will investigate the dielectric properties of HOSP film with X-ray curing for the first time. Additionally, a scanning electron microscope image of circle pattern was made to verify the process practicability. (C) 2002 Elsevier Science B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | hybrid-organic-siloxane-polymer | en_US |
dc.subject | low-k | en_US |
dc.subject | X-ray | en_US |
dc.subject | direct patterning | en_US |
dc.title | The novel pattern method of low-k hybrid-organic-siloxane-polymer film using X-ray exposure | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/S0040-6090(02)00940-9 | en_US |
dc.identifier.journal | THIN SOLID FILMS | en_US |
dc.citation.volume | 420 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 403 | en_US |
dc.citation.epage | 407 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000179922500069 | - |
顯示於類別: | 會議論文 |