标题: Growth of carbon nanotubes by microwave plasma chemical vapor deposition using CH4 and CO2
作者: Chen, M
Chen, CM
Chen, CF
材料科学与工程学系
Department of Materials Science and Engineering
关键字: carbon nanotubes;chemical vapor deposition;diamond film
公开日期: 2-十二月-2002
摘要: Carbon nanotubes (CNTs) were grown vertically and aligned on Fe catalytic nanoparticles which were deposited on a Si substrate at low temperature using CH4 and CO2 gas mixtures. A dynamic form of optical emission spectroscopy was used to C detect the species in the plasma. These data show the dominant species in gas phase reaction. The composition of plasma significantly affects the reaction mechanism of CNTs growth and diamond film synthesis. The growth quality of CNTs is better C than a conventional reaction in a gas mixture of hydrogen and hydrocarbons. However, the highest yield of CNTs of approximately 70% was obtained by microwave plasma chemical vapor deposition for CH4-CO2 gas mixture at a flow rate of CH4/CO2 at 96%, power supply of 300 W, reaction time of 20 min and bias voltage of 150 V In summary, the oxygen containing in the CH4-CO2 gas system can increase the amount of C-2 In the C-2-rich plasma the excited C-2 emission at a higher intensity is beneficial to graphite deposition, which enhances CNTs synthesis on catalyst-deposited surface quality. (C) 2002 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0040-6090(02)00800-3
http://hdl.handle.net/11536/28325
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(02)00800-3
期刊: THIN SOLID FILMS
Volume: 420
Issue: 
起始页: 230
结束页: 234
显示于类别:Conferences Paper


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