Comparison of 1300 nm quantum well lasers using different material systems

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DC 欄位	值	語言
dc.contributor.author	Lin, G	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:41:40Z	-
dc.date.available	2014-12-08T15:41:40Z	-
dc.date.issued	2002-12-01	en_US
dc.identifier.issn	0306-8919	en_US
dc.identifier.uri	http://dx.doi.org/10.1023/A:1021386822847	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28340	-
dc.description.abstract	The band structure and material gain are calculated for 1300-nm band quantum well lasers of GaInNAs, AlGaInAs and GaInAsP material systems. The material compositions for each system are carefully chosen for comparison. The calculated results show that the peak gain is around the same in spite of the difference in band structures for the three systems.	en_US
dc.language.iso	en_US	en_US
dc.subject	band offset ratio	en_US
dc.subject	band structure	en_US
dc.subject	material gain	en_US
dc.subject	1300-nm band	en_US
dc.subject	quaternary material system	en_US
dc.title	Comparison of 1300 nm quantum well lasers using different material systems	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1023/A:1021386822847	en_US
dc.identifier.journal	OPTICAL AND QUANTUM ELECTRONICS	en_US
dc.citation.volume	34	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1191	en_US
dc.citation.epage	1200	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000179569200005	-
dc.citation.woscount	17	-
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