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dc.contributor.authorChang, TYen_US
dc.contributor.authorChen, HWen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorChao, TSen_US
dc.date.accessioned2014-12-08T15:41:43Z-
dc.date.available2014-12-08T15:41:43Z-
dc.date.issued2002-12-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2002.807451en_US
dc.identifier.urihttp://hdl.handle.net/11536/28363-
dc.description.abstractThis study describes a novel technique for forming low temperature oxides (<350 degreesC) using a replacement metal gate process. Low temperature oxides were generated by N2O plasma in a PECVD system with pretreatment in CF4. Fabricated oxides demonstrate excellent current-voltage (I-V) characteristics, such as low leakage current, high breakdown charge and good reliability. Experimental results indicate that CF4 plasma treatment can significantly improve the mobility and resistance against hot carrier stress of MOSFETs. With excellent electrical properties, this technique is suitable for fabrication low temperature devices.en_US
dc.language.isoen_USen_US
dc.subjectlow temperature oxidesen_US
dc.subjectmobility and hot carrier stressen_US
dc.subjectN2O/CF4 plasmaen_US
dc.subjectQbden_US
dc.subjectreplacement metal gateen_US
dc.subjectTDDBen_US
dc.titleEffect of CF4 plasma pretreatment on low temperature oxidesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2002.807451en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume49en_US
dc.citation.issue12en_US
dc.citation.spage2163en_US
dc.citation.epage2170en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000180982000009-
dc.citation.woscount1-
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