完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng, Hui-Wen | en_US |
dc.contributor.author | Li, Yiming | en_US |
dc.date.accessioned | 2014-12-08T15:41:46Z | - |
dc.date.available | 2014-12-08T15:41:46Z | - |
dc.date.issued | 2009 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28399 | - |
dc.description.abstract | In this work, a novel nanogap with inclined protrusion cathode in palladium strip fabricated by hydrogen absorption under high pressure treatment is optimized for the surface conduction electron emitter. The results of our previous study had shown that the field emission property of the tested structure is superior to conventional one with a coplanar cathode. For a specified emitter material, the surface conduction electron-emitters (SCE) are further investigated by varying the thickness, tilted angle and gap of palladium (Pd). An optimal field emission efficiency with 80 tilted angle, 120 nm gap and 10 nm thickness of Pd is found for certain designed field emission efficiency. We further find that varying the emitter material work function of the emitter material from 5.12 eV to 3.9 eV will further improve the field emission property due to the increase of the emitted current. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Enhancement of Field Emission on Surface Conduction Electron-Emitters | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2009 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS, VOL XL, BOOKS I - III | en_US |
dc.citation.spage | 50 | en_US |
dc.citation.epage | 53 | en_US |
dc.contributor.department | 電信工程研究所 | zh_TW |
dc.contributor.department | Institute of Communications Engineering | en_US |
dc.identifier.wosnumber | WOS:000272997600014 | - |
顯示於類別: | 會議論文 |