完整後設資料紀錄
DC 欄位語言
dc.contributor.authorCheng, Hui-Wenen_US
dc.contributor.authorLi, Yimingen_US
dc.date.accessioned2014-12-08T15:41:46Z-
dc.date.available2014-12-08T15:41:46Z-
dc.date.issued2009en_US
dc.identifier.urihttp://hdl.handle.net/11536/28399-
dc.description.abstractIn this work, a novel nanogap with inclined protrusion cathode in palladium strip fabricated by hydrogen absorption under high pressure treatment is optimized for the surface conduction electron emitter. The results of our previous study had shown that the field emission property of the tested structure is superior to conventional one with a coplanar cathode. For a specified emitter material, the surface conduction electron-emitters (SCE) are further investigated by varying the thickness, tilted angle and gap of palladium (Pd). An optimal field emission efficiency with 80 tilted angle, 120 nm gap and 10 nm thickness of Pd is found for certain designed field emission efficiency. We further find that varying the emitter material work function of the emitter material from 5.12 eV to 3.9 eV will further improve the field emission property due to the increase of the emitted current.en_US
dc.language.isoen_USen_US
dc.titleEnhancement of Field Emission on Surface Conduction Electron-Emittersen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2009 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS, VOL XL, BOOKS I - IIIen_US
dc.citation.spage50en_US
dc.citation.epage53en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000272997600014-
顯示於類別:會議論文