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dc.contributor.authorCHANG, SJen_US
dc.contributor.authorLEE, CPen_US
dc.date.accessioned2014-12-08T15:04:20Z-
dc.date.available2014-12-08T15:04:20Z-
dc.date.issued1993-10-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/11536/2839-
dc.description.abstractThe effect of ion bombardment on sidegating effect in GaAs MESFETs has been studied by two-dimensional numerical simulations. Respective contributions of the bombardment induced electron traps, hole traps and neutral recombination centers to the suppression of sidegating effect in GaAs MESFETs have been studied. The increase of electron traps and the induced neutral recombination centers was found to be the main reason for the reduction of the sidegating effect. The results provide a further support to the sidegating picture in which Schottky contacts on the semi-insulating substrate play an important role.en_US
dc.language.isoen_USen_US
dc.titleNUMERICAL-SIMULATION OF THE SUPPRESSION OF SIDEGATING EFFECTS IN GAAS-MESFETS BY ION-BOMBARDMENTen_US
dc.typeArticleen_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume36en_US
dc.citation.issue10en_US
dc.citation.spage1455en_US
dc.citation.epage1464en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1993LR66000011-
dc.citation.woscount1-
Appears in Collections:Articles


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