NUMERICAL-SIMULATION OF THE SUPPRESSION OF SIDEGATING EFFECTS IN GAAS-MESFETS BY ION-BOMBARDMENT

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHANG, SJ	en_US
dc.contributor.author	LEE, CP	en_US
dc.date.accessioned	2014-12-08T15:04:20Z	-
dc.date.available	2014-12-08T15:04:20Z	-
dc.date.issued	1993-10-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2839	-
dc.description.abstract	The effect of ion bombardment on sidegating effect in GaAs MESFETs has been studied by two-dimensional numerical simulations. Respective contributions of the bombardment induced electron traps, hole traps and neutral recombination centers to the suppression of sidegating effect in GaAs MESFETs have been studied. The increase of electron traps and the induced neutral recombination centers was found to be the main reason for the reduction of the sidegating effect. The results provide a further support to the sidegating picture in which Schottky contacts on the semi-insulating substrate play an important role.	en_US
dc.language.iso	en_US	en_US
dc.title	NUMERICAL-SIMULATION OF THE SUPPRESSION OF SIDEGATING EFFECTS IN GAAS-MESFETS BY ION-BOMBARDMENT	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	36	en_US
dc.citation.issue	10	en_US
dc.citation.spage	1455	en_US
dc.citation.epage	1464	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1993LR66000011	-
dc.citation.woscount	1	-
顯示於類別：	期刊論文