EVIDENCE OF ZERO POTENTIAL SPIKE ENERGY IN ALGAAS GAAS HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORS

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHEN, HR	en_US
dc.contributor.author	LEE, CP	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	TSAI, KL	en_US
dc.contributor.author	TSANG, JS	en_US
dc.date.accessioned	2014-12-08T15:04:20Z	-
dc.date.available	2014-12-08T15:04:20Z	-
dc.date.issued	1993-10-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2842	-
dc.description.abstract	The potential spike energy at the emitter junction of AlGaAs/GaAs heterostructure emitter bipolar transistors (HEBT) was directly measured for the first time. Experimental data revealed that emitter thickness as thin as 300 angstrom is thick enough to eliminate potential spike without compositional grading. It is found that the band bending in n-GaAs reduces the potential spike and hence very low offset voltage of 70 mV with high current gain of 150 can be obtained.	en_US
dc.language.iso	en_US	en_US
dc.subject	HEBT	en_US
dc.subject	POTENTIAL SPIKE	en_US
dc.subject	BAND BENDING	en_US
dc.subject	OFFSET VOLTAGE	en_US
dc.title	EVIDENCE OF ZERO POTENTIAL SPIKE ENERGY IN ALGAAS GAAS HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORS	en_US
dc.type	Article	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	32	en_US
dc.citation.issue	10A	en_US
dc.citation.spage	L1397	en_US
dc.citation.epage	L1399	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1993MC04400009	-
dc.citation.woscount	6	-
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