完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsiao, CC | en_US |
dc.contributor.author | Lee, YP | en_US |
dc.contributor.author | Wang, NS | en_US |
dc.contributor.author | Wang, JH | en_US |
dc.contributor.author | Lin, MC | en_US |
dc.date.accessioned | 2014-12-08T15:41:49Z | - |
dc.date.available | 2014-12-08T15:41:49Z | - |
dc.date.issued | 2002-10-31 | en_US |
dc.identifier.issn | 1089-5639 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/jp020916n | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/28442 | - |
dc.description.abstract | Rate coefficients of the reaction O(P-3) + HCl in the temperature range 1093-3197 K were determined using a diaphragmless shock tube. O atoms in the ground electronic P-3 states were generated either by photolysis Of SO2 with a KrF excimer laser at 248 nm or by pyrolysis of N2O with the shock wave. Their concentrations were monitored via atomic resonance absorption excited by emission from a microwave-discharged mixture of O-2 and He. Rate coefficients determined in this work show non-Arrhenius behavior, with values consistent with previously reported. measurements for T < 1486 K; they fit well with the equation k(1)(T) = (9.27 +/- 0.03) X 10(-24) T3.67+/-0.18 exp[-(1030 +/- 160)/T] cm(3) molecule(-1) s(-1); listed errors represent one standard deviation in fitting. Theoretical calculations at the CCSD(T)/6-311 +G(d, p) level locate a bent (3)A" (TS1) and a linear (3)A' (TS3) transition state characterized previously. On the basis of the results computed by CCSD(T)/ 6-311 +G(3df,2p)//CCSD(T)/6-311 +G(d,p), the rate coefficients predicted with conventional transition-state theory, including Eckart-tunneling corrections and with variational transition-state theory including zero- and small-curvature tunneling corrections, all agree satisfactorily with experimental observations. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Experimental and theoretical studies of the rate coefficients of the reaction O(P-3)+HCl at high temperatures | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/jp020916n | en_US |
dc.identifier.journal | JOURNAL OF PHYSICAL CHEMISTRY A | en_US |
dc.citation.volume | 106 | en_US |
dc.citation.issue | 43 | en_US |
dc.citation.spage | 10231 | en_US |
dc.citation.epage | 10237 | en_US |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:000178873900021 | - |
dc.citation.woscount | 16 | - |
顯示於類別: | 期刊論文 |