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dc.contributor.authorLin, SDen_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorHsieh, WHen_US
dc.contributor.authorSuen, YWen_US
dc.date.accessioned2014-12-08T15:41:50Z-
dc.date.available2014-12-08T15:41:50Z-
dc.date.issued2002-10-14en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1515878en_US
dc.identifier.urihttp://hdl.handle.net/11536/28455-
dc.description.abstractThe growth of GaAs antiwires in the In0.53Ga0.47As matrix on InP substrate has been investigated. The periodic, wire-like structure was obtained when a proper amount of GaAs was deposited. The grown antiwires have a height about 1.2-2.0 nm and a period about 23 nm. Using an In0.53Ga0.47As/In0.52Al0.48As modulation-doped structure, the effect of the GaAs antiwires on the two-dimensional electron gas mobility was investigated. For the sample with antiwires near the two-dimensional channel, a significant anisotropy in low temperature mobility was observed. (C) 2002 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleSelf-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1515878en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume81en_US
dc.citation.issue16en_US
dc.citation.spage3007en_US
dc.citation.epage3009en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000178460500031-
dc.citation.woscount5-
Appears in Collections:Articles


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