Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates

doi:10.1063/1.1515878

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DC 欄位	值	語言
dc.contributor.author	Lin, SD	en_US
dc.contributor.author	Lee, CP	en_US
dc.contributor.author	Hsieh, WH	en_US
dc.contributor.author	Suen, YW	en_US
dc.date.accessioned	2014-12-08T15:41:50Z	-
dc.date.available	2014-12-08T15:41:50Z	-
dc.date.issued	2002-10-14	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1515878	en_US
dc.identifier.uri	http://hdl.handle.net/11536/28455	-
dc.description.abstract	The growth of GaAs antiwires in the In0.53Ga0.47As matrix on InP substrate has been investigated. The periodic, wire-like structure was obtained when a proper amount of GaAs was deposited. The grown antiwires have a height about 1.2-2.0 nm and a period about 23 nm. Using an In0.53Ga0.47As/In0.52Al0.48As modulation-doped structure, the effect of the GaAs antiwires on the two-dimensional electron gas mobility was investigated. For the sample with antiwires near the two-dimensional channel, a significant anisotropy in low temperature mobility was observed. (C) 2002 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1515878	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	81	en_US
dc.citation.issue	16	en_US
dc.citation.spage	3007	en_US
dc.citation.epage	3009	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000178460500031	-
dc.citation.woscount	5	-
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