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dc.contributor.authorHuang, HYen_US
dc.contributor.authorXiao, JQen_US
dc.contributor.authorKu, CSen_US
dc.contributor.authorChung, HMen_US
dc.contributor.authorChen, WKen_US
dc.contributor.authorChen, WHen_US
dc.contributor.authorLee, MCen_US
dc.contributor.authorLee, HYen_US
dc.date.accessioned2014-12-08T15:41:51Z-
dc.date.available2014-12-08T15:41:51Z-
dc.date.issued2002-10-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1503160en_US
dc.identifier.urihttp://hdl.handle.net/11536/28466-
dc.description.abstractRapid thermal annealing effects on blue luminescence of As-implanted GaN grown by metalorganic vapor phases epitaxy were investigated by means of photoluminescence and photoluminescence excitation measurements. The locations of the As-implantation induced bands and the associated transition channels for the emission were determined to characterize the As-implanted GaN. After the rapid thermal annealing treatment, the deep As-related levels become more ready to be populated by photoexcitation at low temperature so that the new blue luminescence emission peak is enhanced significantly, whose activation energy is found to be 46 meV. (C) 2002 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleRapid thermal annealing effects on blue luminescence of As-implanted GaNen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1503160en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume92en_US
dc.citation.issue7en_US
dc.citation.spage4129en_US
dc.citation.epage4131en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000178087600109-
dc.citation.woscount4-
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