INVESTIGATION OF SI-SIO2 INTERFACE PROPERTIES FOR BONDED SILICON-ON-INSULATOR

Full metadata record

DC Field	Value	Language
dc.contributor.author	YEH, CF	en_US
dc.contributor.author	KAO, HW	en_US
dc.contributor.author	CHANG, BS	en_US
dc.contributor.author	CHANG, KL	en_US
dc.date.accessioned	2014-12-08T15:04:20Z	-
dc.date.available	2014-12-08T15:04:20Z	-
dc.date.issued	1993-10-01	en_US
dc.identifier.issn	0261-8028	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2846	-
dc.language.iso	en_US	en_US
dc.title	INVESTIGATION OF SI-SIO2 INTERFACE PROPERTIES FOR BONDED SILICON-ON-INSULATOR	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF MATERIALS SCIENCE LETTERS	en_US
dc.citation.volume	12	en_US
dc.citation.issue	19	en_US
dc.citation.spage	1506	en_US
dc.citation.epage	1507	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1993MB24100007	-
dc.citation.woscount	0	-
Appears in Collections:	Articles