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dc.contributor.authorSun, KWen_US
dc.contributor.authorWu, JCen_US
dc.contributor.authorLee, BCen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:41:53Z-
dc.date.available2014-12-08T15:41:53Z-
dc.date.issued2002-10-01en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/13/5/306en_US
dc.identifier.urihttp://hdl.handle.net/11536/28491-
dc.description.abstractIn this paper, we present experimental results oil the selective growth of InAs self-organized quantum dots on patterned substrates using electron-beam lithography and molecular beam epitaxy. Higher dot densities were found on the patterned substrate with a particular pattern orientation compared to the densities of dots grown on the non-patterned area. Good quality of the quantum dot arrays and long-range ordering was also achieved. We have also studied the luminescence spectra of these quantum dots. Dots grown on patterned substrates do indeed show different luminescence characteristics compared to dots on non-patterned surfaces. (Some figures in this article are in colour only in the electronic version).en_US
dc.language.isoen_USen_US
dc.titleSelective growth and photoluminescence studies of InAs self-organized quantum dot arrays on patterned GaAs(001) substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/13/5/306en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume13en_US
dc.citation.issue5en_US
dc.citation.spage576en_US
dc.citation.epage580en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000179070200008-
dc.citation.woscount5-
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