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dc.contributor.authorChen, LCen_US
dc.contributor.authorWen, CYen_US
dc.contributor.authorLiang, CHen_US
dc.contributor.authorHong, WKen_US
dc.contributor.authorChen, KJen_US
dc.contributor.authorCheng, HCen_US
dc.contributor.authorShen, CSen_US
dc.contributor.authorWu, CTen_US
dc.contributor.authorChen, KHen_US
dc.date.accessioned2014-12-08T15:41:54Z-
dc.date.available2014-12-08T15:41:54Z-
dc.date.issued2002-10-01en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/28493-
dc.identifier.urihttp://dx.doi.org/10.1002/1616-3028(20021016)12:10<687en_US
dc.description.abstractVertically aligned carbon nanotubes (CNTs) with controllable length and diameter fabricated by microwave plasma enhanced chemical vapor deposition (MPECVD) are of continuing interest for various applications. This paper describes the role of process gas composition as well as the pre-coating catalytic layer characteristics. It is observed that nucleation of CNTs was significantly enhanced by adding nitrogen in the MPECVD process, which also promoted formation of bamboo-like structures. The very first key step toward growth of aligned CNTs was the formation of high-density fine carbon onion encapsulated metal (COEM) particles under a hydrogen plasma. Direct microscopic investigation of their structural evolution during the very early stages revealed that elongation, necking, and splitting of the COEM particles occurred accompanying the growth of CNTs, such that one of the split portions rode on the top of the growing tube while the remaining one resided on the root. Our results suggest that CNTs grow via the "tip-growth" as well as "root-growth" mechanisms.en_US
dc.language.isoen_USen_US
dc.titleControlling steps during early stages of the aligned growth of carbon nanotubes using microwave plasma enhanced chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/1616-3028(20021016)12:10<687en_US
dc.identifier.journalADVANCED FUNCTIONAL MATERIALSen_US
dc.citation.volume12en_US
dc.citation.issue10en_US
dc.citation.spage687en_US
dc.citation.epage692en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000179020000005-
dc.citation.woscount57-
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