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dc.contributor.authorChen, KJen_US
dc.contributor.authorHong, WKen_US
dc.contributor.authorLin, CPen_US
dc.contributor.authorChen, KHen_US
dc.contributor.authorChen, LCen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:41:55Z-
dc.date.available2014-12-08T15:41:55Z-
dc.date.issued2002-10-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/28504-
dc.description.abstractThe density of carbon nanotubes (CNTs) deposited by microwave plasma chemical vapor deposition (MPCVD) is extremely high, which results in screening effect in the electric field. To achieve excellent field emission characteristics. an excimer laser treatment (ELT) was introduced to reduce the density of CNTs, Scanning electron microscopy (SEM) micrographs showed reduced densities of the CNTs, and the measurement of electrical characteristics results repealed the improved field emission properties under suitable ELT conditions. The turn-on field decreased from 3 V/mum to 2.1 V/mum. and the emission Current density increased from 5.73 mA/cm(2) to 87.13 mA/cm(2) at the applied field of 5 V/mum.en_US
dc.language.isoen_USen_US
dc.subjectcarbon nanotubesen_US
dc.subjectfield emission diodeen_US
dc.subjectfield emission displayen_US
dc.titleImprovement of field emission characteristics of carbon nanotubes by excimer laser treatmenten_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume41en_US
dc.citation.issue10en_US
dc.citation.spage6132en_US
dc.citation.epage6136en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000179893600052-
dc.citation.woscount4-
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