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dc.contributor.authorHuang, CEen_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorLiang, HCen_US
dc.contributor.authorHuang, RTen_US
dc.date.accessioned2014-12-08T15:41:56Z-
dc.date.available2014-12-08T15:41:56Z-
dc.date.issued2002-10-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2002.803758en_US
dc.identifier.urihttp://hdl.handle.net/11536/28508-
dc.description.abstractIn this paper, the influence of the spacing between the emitter and the base on the performance of InGaP heterojunction bipolar transistors (HBT) was experimentally studied. We found that the emitter to base spacing can be reduced to as small as 0.6 mum without causing a significant drop in the current gain. The reduction in emitter-to-base spacing, however, leads to improvement in high-frequency performance and device phase noise. For optimal dc, RF, and low-frequency noise performances, we have determined that a critical spacing of 0.6similar to0.8 mum between the emitter and the base of an InGaP HBT is required.en_US
dc.language.isoen_USen_US
dc.subjectcritical spacing between emitter and baseen_US
dc.subjectflicker noiseen_US
dc.subjectInGaPHBTen_US
dc.subjectledge lengthen_US
dc.titleCritical spacing between emitter and base in InGaP heterojunction bipolar transistors (HBTs)en_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2002.803758en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume23en_US
dc.citation.issue10en_US
dc.citation.spage576en_US
dc.citation.epage578en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000178497900002-
dc.citation.woscount19-
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