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| Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors | 106 |
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| Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors | 106 |
| 檢視 | |
|---|---|
| 000178182600030.pdf | 13 |
| 檢視 | |
|---|---|
| 中國 | 98 |
| 美國 | 7 |
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|---|---|
| Shenzhen | 96 |
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| Kensington | 1 |
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